Single crystalline extrinsic bases for bipolar junction structures
AssigneeInternational Business Machines Corporation
InventorsPouya Hashemi, Tak Ning, Jeng-Bang Yau, Alexander Reznicek
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Abstract
Bipolar junction transistor structures and methods for making the same are provide. The method includes: providing a substrate with an insulator layer and a device layer over the insulator layer, forming an intrinsic base from the device layer, forming emitter and collector regions from the device layer, and after forming i) the intrinsic base and ii) the emitter and collector regions, depositing a single crystalline extrinsic base over the intrinsic base.
Claims18
A method for forming a bipolar transistor (BJT) structure comprising:
- providing a substrate with an insulator layer and a device layer over the insulator layer;
- forming an intrinsic base from the device layer;
- forming emitter and collector regions from the device layer;
- after forming i) the intrinsic base and ii) the emitter and collector regions, depositing a single crystalline extrinsic base over the intrinsic base;
- prior to depositing the extrinsic base, forming an inter-layer dielectric (ILD) material over the structure;
- forming a dummy base, with a hardmask thereon, over the device layer;
- and
- performing chemical-mechanical planarization (CMP) on the structure to planarize the ILD in relation to the hardmask.
A bipolar junction transistor structure (BJT) comprising:
- a substrate;
- an intrinsic base comprising a semiconductor material and is disposed over the substrate;
- a plurality of spacers over the intrinsic base;
- emitter and collector regions present on opposing sides of the intrinsic base;
- an inter-layer dielectric (ILD) material over the emitter and collector regions;
- a plurality of contacts in contact with each of the emitter and collector regions;
- a single crystalline extrinsic base comprising a semiconductor material and is disposed over the intrinsic base, wherein the single crystalline extrinsic base has one or more facets;
- and
- a metal silicide contact comprising a contact area in contact with the extrinsic base, wherein the contact area is determined by the one or more facets.
A bipolar junction transistor structure (BJT) comprising:
- a substrate;
- an intrinsic base comprising a semiconductor material and is disposed over the substrate;
- a plurality of spacers over the intrinsic base;
- emitter and collector regions present on opposing sides of the intrinsic base;
- a single crystalline extrinsic base comprising a semiconductor material and is disposed over the intrinsic base,
- wherein the semiconductor material of the extrinsic base has a wider band gap than the semiconductor material of the intrinsic base,
- wherein both the extrinsic base and one or more junctions in contact with the intrinsic base are doped with at least one of an n-type dopant and a p-type dopant,
- wherein the intrinsic base is between 1 nm to 15 nm in length,
- and wherein the extrinsic base is between 12 nm and 17 nm in length.
Dependencies are inferred from the claim text.