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US 10,483,367 B2Granted
Vertical gate all around (VGAA) devices and methods of manufacturing the same
AssigneeTaiwan Semiconductor Manufacturing Company, Ltd.
InventorsChia-Hao Chang, Ming-Shan Shieh, Cheng-Long Chen, Chin-Chi Wang, Chi-Wen Liu, Wai-Yi Lien, Chih-Hao Wang
Life of this patent
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Abstract
Vertical gate all around (VGAA) devices and methods of manufacture thereof are described. A method for manufacturing a VGAA device includes: exposing a top surface and sidewalls of a first portion of a protrusion extending from a doped region, wherein a second portion of the protrusion is surrounded by a gate stack; and enlarging the first portion of the protrusion using an epitaxial growth process.
Claims20
A semiconductor device, comprising:
- a semiconductor substrate having a doped region;
- a spacer layer over the semiconductor substrate;
- a protrusion extending from the doped region away from the semiconductor substrate, the protrusion comprising a first source/drain region adjacent the doped region, a channel region disposed over the first source/drain region, and a second source/drain region disposed over the channel region;
- a gate stack encircling the channel region of the protrusion, the gate stack being over the spacer layer;
- and
- an epitaxial semiconductor material disposed over a top surface and extending from sidewalls of the second source/drain region of the protrusion, the epitaxial semiconductor material having an octagonal shape in cross-sectional view.
3 more elements
A device comprising:
- a first doped region over a semiconductor substrate, the first doped region having a first conductivity;
- a first protrusion extending from the first doped region;
- a second doped region laterally adjacent the first doped region, the second doped region having a second conductivity different from the first conductivity;
- a second protrusion extending from the second doped region;
- an isolation feature disposed between the first doped region and the second doped region, the isolation feature comprising an insulating material;
- a first gate stack surrounding a first portion of the first protrusion, wherein a second portion of the first protrusion is free from the first gate stack;
- a second gate stack surrounding a first portion of the second protrusion, wherein a second portion of the second protrusion is free from the second gate stack;
- a spacer having a first sidewall and a second sidewall, the first sidewall contacting a sidewall of the first gate stack, and the second sidewall contacting a sidewall of the second gate stack;
- a first epitaxial semiconductor material surrounding the second portion of the first protrusion, the first epitaxial semiconductor material having a hexagonal shape in top-down view;
- and
- a second epitaxial semiconductor material surrounding the second portion of the second protrusion, the second epitaxial semiconductor material having a hexagonal shape in top-down view.
8 more elements
A device, comprising:
- a semiconductor substrate having a doped region;
- a first protrusion extending from the doped region, the first protrusion comprising a first source/drain region adjacent the doped region, a first channel region disposed over the first source/drain region, and a second source/drain region disposed over the first channel region;
- a second protrusion extending from the doped region, the second protrusion comprising a third source/drain region adjacent the doped region, a second channel region disposed over the third source/drain region, and a fourth source/drain region disposed over the second channel region;
- a gate stack encircling the first channel region of the first protrusion and the second channel region of the second protrusion;
- a first epitaxial semiconductor material disposed over a top surface and extending from sidewalls of the second source/drain region of the first protrusion, the first epitaxial semiconductor material having an octagonal shape in a first cross-sectional plane;
- and
- a second epitaxial semiconductor material disposed over a top surface and extending from sidewalls of the fourth source/drain region of the second protrusion, the second epitaxial semiconductor material having an octagonal shape in the first cross-sectional plane.
4 more elements
Dependencies are inferred from the claim text.