Semiconductor device

A semiconductor device comprising:

• a third first-conductivity-type semiconductor layer on a semiconductor substrate;
• a first pillar-shaped semiconductor structure vertically extending from a surface of the semiconductor substrate, the first pillar-shaped semiconductor structure including, in sequence,
• a first first-conductivity-type semiconductor layer,
• a first body region,
• a second first-conductivity-type semiconductor layer,
• a first second-conductivity-type semiconductor layer;
• a second body region,
• a second second-conductivity-type semiconductor layer, and
• a third second-conductivity-type semiconductor layer,
• each layer and region vertically aligned within the first pillar-shaped semiconductor structure;
• the semiconductor device further comprising:
• a first gate insulating film around the first body region;
• a first metal gate around the first gate insulating film;
• a second gate insulating film around the second body region;
• a second metal gate around the second gate insulating film;
• an output terminal connected to the second first-conductivity-type semiconductor layer and the first second-conductivity-type semiconductor layer;
• and
• a first contact connecting the first metal gate and the second metal gate;
• a first insulating film surrounding the first first-conductivity-type semiconductor layer and a second insulating film surrounding the second first-conductivity-type semiconductor layer;
• a third insulating film surrounding the first second-conductivity-type semiconductor layer and a fourth insulating film surrounding the second second-conductivity-type semiconductor layer;
• wherein the first insulating film and the second insulating film contain a same impurity as the first and second first-conductivity-type semiconductor layers, respectively;
• and
• wherein the third insulating film and the fourth insulating film contain a same impurity as the first and second second-conductivity-type semiconductor layers, respectively.