Semiconductor structure and manufacturing method thereof
AssigneeTaiwan Semiconductor Manufacturing Company, Ltd.
InventorsChe-Cheng Chang, Chih-Han Lin, Horng-Huei Tseng
Life of this patent
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Abstract
A semiconductor structure includes a substrate, at least one first gate structure, at least one first spacer, at least one source drain structure, and a conductive plug. The first gate structure is present on the substrate. The first spacer is present on at least one sidewall of the first gate structure. The source drain structure is present adjacent to the first spacer. The conductive plug is electrically connected to the source drain structure while leaving a gap between the conductive plug and the spacer.
Claims20
A method for manufacturing a semiconductor structure, the method comprising:
- forming a dielectric layer on at least one gate structure and at least one source drain structure;
- forming an opening in the dielectric layer to expose the source drain structure;
- forming a protection layer on at least one sidewall of the opening;
- forming a conductive plug in the opening, wherein the conductive plug is electrically connected to the source drain structure;
- etching back the dielectric layer to expose a sidewall of the protection layer after the forming the conductive plug;
- and
- removing the protection layer after the forming the conductive plug.
A method comprising:
- forming a gate structure over a substrate, the gate structure comprising spacers on sidewalls of a gate electrode and a mask layer over the gate electrode;
- forming a source drain structure on the substrate adjacent the gate structure;
- forming a first dielectric layer on the gate structure and the source drain structure;
- forming an opening in the first dielectric layer to expose the source drain structure;
- lining the opening with a second dielectric layer;
- patterning the second dielectric layer to expose the source drain structure;
- forming a conductive plug on the second dielectric layer in the opening, the conductive plug contacting the source drain structure;
- and
- removing the second dielectric layer between the conductive plug and the gate structure, wherein after removing the second dielectric layer, the conductive plug has a top surface higher than a top surface of the first dielectric layer.
A method comprising:
- forming a first gate structure and a second gate structure over a substrate, the first gate structure being spaced apart from the second gate structure by a first distance;
- forming a source drain structure on the substrate and between the first and second gate structures;
- forming a first dielectric layer over the first and second gate structures and the source drain structure;
- forming a conductive plug contacting the source drain structure, the conductive plug being in the first dielectric layer;
- and
- after forming the conductive plug, forming a gap between the conductive plug and the first and second gate structures, the gap being filled with a gas, wherein after forming the gap, the conductive plug has an upper portion having a first width, the first width being greater than the first distance.
Dependencies are inferred from the claim text.