Wrap-around-contact structure for top source/drain in vertical FETs

A method for forming a wrap-around-contact, the method comprising:

• forming a bottom source/drain region adjacent a plurality of fins;
• depositing a high-k layer and a work function metal (WFM) layer over the plurality of fins;
• disposing encapsulation layers over the WFM layer;
• recessing the encapsulation layers to expose top portions of the plurality of fins;
• forming top spacers adjacent the top portions of the plurality of fins;
• disposing a sacrificial liner adjacent the encapsulation layers;
• recessing the top spacers;
• forming top source/drain regions over the top portions of the plurality of fins;
• forming V-shaped grooves in the top source/drain regions;
• removing the sacrificial liner to create trenches adjacent the top source/drain regions;
• and
• depositing a metal liner within the trenches and over the V-shaped grooves of the top source/drain regions such that the wrap-around-contact is defined to cover an upper area of the top source/drain regions.