Back to results
US 10,483,357 B2Granted
Semiconductor device
AssigneeFuji Electric Co., Ltd.
InventorsMutsumi Kitamura, Tohru Shirakawa
Life of this patent
Estimating the term…
Loading patent…
Loading patent…
AssigneeFuji Electric Co., Ltd.
InventorsMutsumi Kitamura, Tohru Shirakawa
Estimating the term…
A semiconductor device including: a semiconductor substrate having a drift region of the first conductivity type; a cathode region formed on the lower surface of the semiconductor substrate; a diode portion having the cathode region formed on the lower surface of the semiconductor substrate; the first dummy trench portion provided from the upper surface of the semiconductor substrate to the drift region, including one part provided inside the diode portion and the other part provided outside the diode portion, and provided extending in series from inside the diode portion to outside the diode portion in a predetermined extending direction on the upper surface of the semiconductor substrate; and the first lead-out portion that is provided on the upper surface of the semiconductor substrate, and electrically connected to the first dummy trench portion outside the diode portion is provided.
A semiconductor device comprising:
Dependencies are inferred from the claim text.