US 10,483,353 B2 · Transistor including tensile-strained germanium channel

Abstract

Techniques are disclosed for forming transistor structures including tensile-strained germanium (Ge) channel material. The transistor structures may be used for either or both of n-type and p-type transistor devices, as tensile-strained Ge has very high carrier mobility properties suitable for both types. Thus, a simplified CMOS integration scheme may be achieved by forming n-MOS and p-MOS devices included in the CMOS device using the techniques described herein. In some cases, the tensile-strained Ge may be achieved by epitaxially growing the Ge material on a group III-V material having a lattice constant that is higher than that of Ge and/or by applying a macroscopic 3-point bending to the die on which the transistor is formed. The techniques may be used to form transistors having planar or non-planar configurations, such as finned configurations (e.g., finFET or tri-gate) or gate-all-around (GAA) configurations (including at least one nanowire).

Claims19

Dependent claims

An integrated circuit comprising:

a substrate;
a first transistor comprising
a first body above the substrate, the first body including tensile-strained semiconductor material that includes germanium,
a first gate structure at least above the first body, the first gate structure including one or more metals, and
a first source region and a first drain region, the first body between the first source and drain regions, the first source and drain regions including semiconductor material and n-type dopant;
and
a second transistor comprising
a second body above the substrate, the second body including tensile-strained semiconductor material that includes germanium,
a second gate structure at least above the second body, the second gate structure including one or more metals, and
a second source region and a second drain region, the second body between the second source and drain regions, the second source and drain regions including semiconductor material and p-type dopant.

7 more elements

Dependencies are inferred from the claim text.

Transistor including tensile-strained germanium channel

Life of this patent

Transistor including tensile-strained germanium channel

Life of this patent

Abstract

Claims19