Semiconductor device with support pattern
AssigneeSamsung Electronics Co., Ltd.
InventorsKi-hyung Nam, Bong-Soo Kim, Yoosang Hwang
Life of this patent
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Abstract
A semiconductor device including a plurality of pillars on a semiconductor substrate; and a support pattern in contact with some lateral surfaces of the pillars and connecting the pillars with one another, wherein the support pattern includes openings that expose other lateral surfaces of the pillars, each of the pillars includes a first pillar upper portion in contact with the support pattern and a second pillar upper portion spaced apart from the support pattern, and the second pillar upper portion has a concave slope.
Claims20
A semiconductor device, comprising:
- a plurality of pillars on a semiconductor substrate;
- and
- a support pattern in contact with some lateral surfaces of the pillars and connecting the pillars with one another,
- wherein:
- the support pattern includes openings that expose other lateral surfaces of the pillars,
- each of the pillars includes a first pillar upper portion in contact with the support pattern and a second pillar upper portion spaced apart from the support pattern, and
- the second pillar upper portion has a concave slope.
A semiconductor device, comprising:
- a plurality of bottom electrodes on a semiconductor substrate;
- and
- a support pattern in contact with some lateral surfaces of the bottom electrodes and connecting the bottom electrodes with one another,
- wherein:
- the support pattern includes openings that expose other lateral surfaces of the bottom electrodes, and
- each of upper portions of the bottom electrodes has a partially concave slope.
A semiconductor device, comprising:
- a plurality of bottom electrodes on a semiconductor substrate;
- and
- a support pattern in contact with some lateral surfaces of the bottom electrodes and connecting the bottom electrodes with one another,
- wherein:
- the support pattern includes an opening that exposes other lateral surfaces of the bottom electrodes,
- each of upper portions of the bottom electrodes has a partially concave slope, and
- a bottom surface of the support pattern is farther from the semiconductor substrate than a bottom end of the concave slope.
Dependencies are inferred from the claim text.