Image sensor and manufacturing method thereof

An image sensor, comprising:

• a substrate;
• a patterned electrode layer disposed on the substrate and comprising a plurality of electrode blocks separated from one another;
• a pixel isolation structure disposed on the substrate and comprising a metal halide;
• and
• a patterned photo-electric conversion layer disposed on the plurality of electrode blocks to form a plurality of photo-electric conversion blocks corresponding to the plurality of electrode blocks, wherein the plurality of photo-electric conversion blocks comprise a perovskite material and are separated from one another by the pixel isolation structure,
• wherein a top surface of the patterned photo-electric conversion layer is located higher than a top surface of the pixel isolation structure;
• wherein the perovskite material is represented by a formula as follows:
• (AMX3)1-n(B2MX4)n, wherein “A” denotes a positive monovalent metal cation or a positive monovalent organic cation and “B” denotes an R1-NH3 cation, wherein R1 is an alkyl group having 4-18 carbon atoms, “M” denotes a positive bivalent metal cation, “X” denotes a halogen, and n=0-1.