Three-dimensional semiconductor device
AssigneeSamsung Electronics Co., Ltd.
InventorsJoyoung Park, Seok-Won Lee, Seongjun Seo
Life of this patent
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Abstract
A three-dimensional semiconductor device is provided as follows. A substrate includes a contact region, a dummy region, and a cell array region. A stack structure includes electrodes vertically stacked on the substrate. The electrodes are stacked to have a first stepwise structure on the contact region and a second stepwise structure in the dummy region. Ends of at least two adjacent electrodes in the second stepwise structure have first sidewalls vertically aligned so that horizontal positions of the first sidewalls are substantially the same.
Claims20
A three-dimensional semiconductor device, comprising:
- a substrate including a cell array region, a contact region, and a dummy region, the contact region being adjacent to the cell array region in a first direction, the dummy region being adjacent to the cell array region in a second direction, the second direction being perpendicular to the first direction;
- a first stack structure including a plurality of first electrodes vertically stacked on the substrate, the first stack structure extending along the first direction on the cell array region and the contact region;
- and
- a second stack structure including a plurality of second electrodes vertically stacked on the substrate, the second stack structure being disposed on the dummy region,
- wherein the first stack structure has a first sidewall on the contact region and the second stack structure has a second sidewall on the dummy region respectively, the first sidewall is formed by m number of stepwise stacks of the plurality of first electrodes in the first direction, and the second sidewall is formed by n number of stepwise stacks of the plurality of second electrodes in the second direction, the m and n are natural numbers equal to or greater than two, and the m is greater than n.
A three-dimensional semiconductor device, comprising:
- a substrate;
- and
- a cell array comprising:
- a plurality of electrodes vertically stacked on the substrate, the plurality of electrodes forming m number of stepwise stacks at ends of the plurality of electrodes in a first direction;
- a plurality of dummy electrodes vertically stacked and adjacent to the plurality of electrodes in a second direction, the second direction being perpendicular to the first direction, the plurality of dummy electrodes forming n number of stepwise stacks in the second direction;
- a capping insulating layer covering the plurality of electrodes and the plurality of dummy electrodes;
- and
- a plurality of contact plugs penetrating the capping insulating layer and contacting the plurality of electrodes at each step of the m number of stepwise stacks,
- wherein the m and n are natural numbers equal to or greater than two, and the m is greater than n.
Dependencies are inferred from the claim text.