Memory device and method for fabricating the same

A memory device, comprising:

• a plurality of transistors;
• a first inter-layer dielectric layer over the transistors;
• a plurality of first conductive features embedded in the first inter-layer dielectric layer;
• a plurality of memory structures above the first inter-layer dielectric layer, wherein each of the memory structures has a top electrode, a bottom electrode coupled electrically to a respective one of the first conductive features, and a resistive material layer sandwiched between the top and bottom electrodes;
• and
• a filler in between the memory structures, the filler having a top surface with edges respectively in contact with the memory structures, wherein at least one of the edges of the top surface of the filler that is in contact with its corresponding memory structure is higher than a top surface of the resistive material layer of the corresponding memory structure.

A method for fabricating a memory device, comprising:

• forming a first inter-layer dielectric layer over a plurality of transistors;
• forming a plurality of memory structures above the first inter-layer dielectric layer, wherein each of the memory structures has a top electrode, a bottom electrode, and a resistive material layer sandwiched between the top and bottom electrodes;
• forming a film layer on the memory structures such that the film layer has a recess above a gap between the memory structures, wherein a bottom of the recess of the film layer is above a top surface of the top electrode of at least one of the memory structures;
• filling the recess of the film layer with a recess filler;
• and
• etching back the recess filler and the film layer until reaching the memory structures.