Pixilated display device based upon nanowire LEDs and method for making the same

A method of forming a pixilated display device, comprising:

• growing an array of nanowire LEDs on a substrate, each nanowire LED in the array including a vertical stack, from bottom to top, of a first-wavelength light emitting portion including a first material emitting a first-wavelength light and a second-wavelength light emitting portion including a second material emitting a second-wavelength light;
• and
• while masking a first nanowire LED within the array with a patterned masking layer, removing a second-wavelength light emitting portion from a second nanowire LED within the array;
• wherein growing the array of nanowire LEDs on the substrate comprises:
• forming a growth mask over the substrate, the growth mask having a first aperture in a first area of the first nanowire LED and a second aperture in a second area of the second nanowire LED;
• forming a first nanowire core through the first aperture;
• and
• forming a second nanowire core through the second aperture:
• wherein:
• the first nanowire LED comprises a core-shell nanowire device that comprises the first nanowire core and a first quantum well shell comprising the first-wavelength light emitting portion, the second-wavelength light emitting portion, and a first pyramidal plane quantum well;
• the second nanowire LED comprises a core-shell nanowire device that comprises the second nanowire core and a second quantum well shell comprising the first-wavelength light emitting portion, the second-wavelength light emitting portion, and a second pyramidal plane quantum well;
• the first quantum well shell is formed by deposition of an InGaN layer and a GaN layer around the first nanowire core;
• the second quantum well shell is formed by deposition of the InGaN layer and the GaN layer around the second nanowire core;
• the first quantum well shell and the second quantum well shell are deposited during the same deposition steps;
• the first-wavelength light emitting portion of the first nanowire LED comprises a lower portion of the first quantum well shell located over m-plane sidewalls of the first nanowire core;
• the second-wavelength light emitting portion of the first nanowire LED comprises an eave region of the first quantum well shell located between the lower portion of the first quantum well shell and the first pyramidal plane quantum well of the first quantum well shell located over pyramidal p-plane sidewalls of the first nanowire core;
• the first-wavelength light emitting portion of the second nanowire LED comprises a lower portion of the second quantum well shell located over m-plane sidewalls of the second nanowire core;
• and
• the second-wavelength light emitting portion of the second nanowire LED comprises an eave region of the second quantum well shell located between the lower portion of the second quantum well shell and the second pyramidal plane quantum well of the second quantum well shell located over pyramidal p-plane sidewalls of the second nanowire core.