Backside-illuminated complementary metal oxide semiconductor sensor and the manufacturing method thereof
AssigneeHuaian Imaging Device Manufacturer Corporation
InventorsYosuke Kitamura, Amane Oishi, Xiaolu Huang
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Abstract
A backside-illumination complementary metal oxide semiconductor (CMOS) image sensor, comprises a semiconductor substrate including a first side for receiving incident light and a second side opposite to the first side; and a reflector disposed at the second side of the semiconductor substrate, wherein the reflector is configured to reflect incident light that transmits through the semiconductor substrate back into the semiconductor substrate.
Claims13
A backside-illumination complementary metal oxide semiconductor (CMOS) image sensor, comprising
- a semiconductor substrate including a first side for receiving incident light and a second side opposite to the first side;
- and
- a reflector disposed at the second side of the semiconductor substrate,
- wherein the reflector is configured to reflect incident light that transmits through the semiconductor substrate back into the semiconductor substrate, and
- wherein the reflector is made of an electrically conductive material and is electrically grounded.
A method of manufacturing a backside-illumination complementary metal oxide semiconductor (CMOS) image sensor, comprising
- providing a semiconductor substrate including a first side for receiving incident light and a second side opposite to the first side;
- and
- forming a reflector at the second side of the semiconductor substrate,
- wherein the reflector is configured to reflect the incident light that transmits through the semiconductor substrate back into the semiconductor substrate, and
- the reflector is formed with an electrically conductive material and is electrically grounded.
Dependencies are inferred from the claim text.