Solid-state image pickup device, manufacturing method of solid-state image pickup device, and image pickup device

A solid-state image pickup device, comprising:

• a semiconductor substrate including
• a first photoelectric conversion portion having a first semiconductor region of a first conductivity type that collects signal charges,
• a second photoelectric conversion portion having a second semiconductor region of the first conductivity type that collects signal charges, and
• a third semiconductor region of a second conductivity type different from the first conductivity type,
• wherein the third semiconductor region is arranged between the first semiconductor region and the second semiconductor region in plan view with respect to a first surface of the semiconductor substrate,
• in a depth direction from the first surface to a second surface opposite to the first surface, potential of the third semiconductor region with respect to the signal charges of the first photoelectric conversion portion has a first local minimum value and potential of the third semiconductor region with respect to the signal charges has a second local minimum value, and
• a depth range from a position 0.5 μm shallower than a position indicating the first local minimum value to a position 0.5 μm deeper than the position indicating the first local minimum value and a depth range from a position 0.5 μm shallower than a position indicating the second local minimum value to a position 0.5 μm deeper than the position indicating the second local minimum value are overlapped with each other.

A solid-state image pickup device, comprising:

• a semiconductor substrate including
• a first photoelectric conversion portion having a first semiconductor region of a first conductivity type that collects signal charges,
• a second photoelectric conversion portion having a second semiconductor region of the first conductivity type that collects signal charges, and
• a third semiconductor region of a second conductivity type different from the first conductivity type,
• wherein the third semiconductor region is arranged between the first semiconductor region and the second semiconductor region in plan view with respect to a first surface of the semiconductor substrate,
• a depth of a region where an impurity concentration of the first semiconductor region indicates a local maximum value is within a range from the first surface of the semiconductor substrate to a depth of 1.2 μm, and
• a local minimum value of an impurity concentration of the third semiconductor region is within a range between a depth of 0.2 μm and a depth of 1.2 μm from the first surface.

A solid-state image pickup device, comprising:

• a semiconductor substrate including
• a first photoelectric conversion portion having a first semiconductor region of a first conductivity type that collects signal charges,
• a second photoelectric conversion portion having a second semiconductor region of the first conductivity type that collects signal charges, and
• a third semiconductor region of a second conductivity type different from the first conductivity type,
• wherein the third semiconductor region is arranged between the first semiconductor region and the second semiconductor region in plan view with respect to a first surface of the semiconductor substrate,
• a depth of a region indicating a local minimum value of potential with respect to the signal charges of the first photoelectric conversion portion in the first semiconductor region is within a range between the first surface and a depth of 1.0 μm of the semiconductor substrate, and
• a depth of a region indicating a local minimum value of potential with respect to the signal charges in the third semiconductor region is within a range between a depth of 0.2 μm and a depth of 1.0 μm from the first surface.

A manufacturing method of a solid-state image pickup device including a first photoelectric conversion portion having a first semiconductor region of a first conductivity type, a second photoelectric conversion portion having a second semiconductor region of the first conductivity type, and a third semiconductor region of a second conductivity type different from the first conductivity type which is arranged between the first semiconductor region and the second semiconductor region, the manufacturing method comprising:

• injecting an impurity that gives the second conductivity type at a first concentration and a first acceleration voltage into a semiconductor substrate having the first conductivity type by causing the impurity to pass through a first region of a surface of the semiconductor substrate;
• injecting an impurity that gives the second conductivity type at a second concentration lower than the first concentration and at a second acceleration voltage lower than the first acceleration voltage into the semiconductor substrate through the first region;
• and
• injecting an impurity that gives the first conductivity type at a third concentration and a third acceleration voltage into the semiconductor by causing the impurity to pass through a second region and a third region, which are different from the first region, on the surface of the semiconductor substrate,
• wherein the first region is located between the second region and the third region.