Photoelectric conversion element and photoelectric conversion device

A photoelectric conversion device, comprising:

• one or more photoelectric conversion elements;
• and
• a driver section that drives the one or more photoelectric conversion elements,
• wherein the one or more photoelectric conversion elements each including:
• a photoelectric conversion region inside a semiconductor layer,
• the photoelectric conversion region including a region in which a depletion region is to be formed by voltage application to the semiconductor layer,
• the semiconductor layer having a first main surface and a second main surface,
• the depletion region converting light into a photoelectron, and
• the light entering from a side on which the first main surface is disposed,
• an isoelectronic trap region in the region in which the depletion region is to be formed;
• a pair of first impurity regions formed in the first main surface with a predetermined spacing, the pair of the first impurity regions having an identical electrical-conductivity type to an electrical-conductivity type of the semiconductor layer and having a relatively high impurity concentration;
• and
• a pair of second impurity regions formed in the first main surface, with the pair of the first impurity regions interposed between the pair of the second impurity regions, the pair of the second impurity regions having a different electrical-conductivity type from the electrical-conductivity type of the semiconductor layer,
• wherein the isoelectronic trap region being formed at least in the spacing between the pair of the first impurity regions, and
• wherein the driver section applying pulsed voltages having reverse phases to each other to the pair of the first impurity regions.