Image sensor
AssigneeSamsung Electronics Co., Ltd.
InventorsGwi-Deok Ryan Lee, Tae Yon Lee
Life of this patent
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Abstract
An image sensor includes a light-sensing element that generates charge in response to incident light, a storage diode formed in a substrate, wherein the storage diode stores the charge generated by the light-sensing element, a floating diffusion region formed in a top surface of the substrate and spaced apart from the storage diode, and a transfer gate at least partially buried under the top surface of the substrate, wherein the transfer gate controls the transfer of the charge from the storage diode to the floating diffusion region.
Claims20
An image sensor, comprising:
- a light-sensing element that generates charge in response to incident light;
- a storage diode formed in a substrate, wherein the storage diode stores the charge generated by the light-sensing element;
- a floating diffusion region formed in a top surface of the substrate and spaced apart from the storage diode;
- a transfer gate at least partially buried under the top surface of the substrate, wherein the transfer gate controls both the transfer of the charge from the light-sensing element to the storage diode, and the transfer of the charge from the storage diode to the floating diffusion region.
An image sensor, comprising:
- a substrate having a top surface and an opposing bottom surface;
- a trench formed in the top surface of the substrate;
- a transfer gate filling the trench;
- a first charge storage region formed in the substrate on a first side of the transfer gate;
- a second charge storage region formed in the substrate on a second side of the transfer gate;
- and
- a floating diffusion region exposed through the top surface of the substrate,
- wherein the transfer gate controls transfer of charge stored in the first charge storage region to the second charge storage region in response to a first voltage, and transfer of charge stored in the second storage region to the floating diffusion region in response to a second voltage different from the first voltage.
An image sensor, comprising:
- a sensor array including pixels that respectively convert an optical signal into a corresponding electrical output;
- and
- a timing generator controlling the sensor array,
- wherein each of the pixels includes a light-sensing element that generates charge in response to the optical signal, a storage diode formed in a substrate that stores the charge generated by the light-sensing element, a floating diffusion region formed in the substrate and spaced apart from the storage diode in a first direction, and a transfer gate buried in the substrate in the first direction, and
- the transfer gate controls the transfer of charge from the light-sensing element to the storage diode in response to a first transfer signal provided by the timing generator, and the transfer of charge from the storage diode to the floating diffusion region in response to a second transfer signal provided by the timing generator.
Dependencies are inferred from the claim text.