Light-receiving element, method of manufacturing light-receiving element, imaging device, and electronic apparatus

A method of manufacturing a light-receiving element, the method comprising:

• forming, on a substrate,
• a photoelectric conversion layer that includes a first compound semiconductor, wherein the photoelectric conversion layer absorbs a wavelength in an infrared region to generate electric charges, and
• a semiconductor layer that includes a second compound semiconductor, wherein
• the semiconductor layer has an opening in a first selective region of the semiconductor layer, and
• a side face of the opening of the semiconductor layer includes an inclined face;
• and
• forming, on the substrate, an electrode that buries the opening of the semiconductor layer, wherein the electrode is electrically coupled to the photoelectric conversion layer.

An imaging device, comprising:

• a plurality of pixels;
• a substrate;
• a photoelectric conversion layer on the substrate, wherein
• the photoelectric conversion layer includes a first compound semiconductor, and
• the photoelectric conversion layer absorbs a wavelength in an infrared region to generate electric charges;
• a semiconductor layer on the photoelectric conversion layer, wherein
• the semiconductor layer includes a second compound semiconductor, and
• the semiconductor layer has a respective opening for each of the plurality of pixels;
• and
• a plurality of electrodes, wherein
• each of the plurality of electrodes buries the respective opening of the semiconductor layer, and
• each of the plurality of electrodes is electrically coupled to the photoelectric conversion layer.

An electronic apparatus, comprising:

• an imaging device, wherein the imaging device comprises:
• a plurality of pixels;
• a substrate;
• a photoelectric conversion layer on the substrate, wherein
• the photoelectric conversion layer includes a first compound semiconductor, and
• the photoelectric conversion layer absorbs a wavelength in an infrared region to generate electric charges;
• a semiconductor layer on the photoelectric conversion layer, wherein
• the semiconductor layer includes a second compound semiconductor, and
• the semiconductor layer has a respective opening for each of the plurality of pixels;
• and
• a plurality of electrodes, wherein
• each of the plurality of electrodes buries the respective opening of the semiconductor layer, and
• each of the plurality of electrodes electrically coupled to the photoelectric conversion layer.