Semiconductor device comprising resistor comprising metal oxide

A semiconductor device comprising:

• a resistor comprising a metal oxide film over an insulating surface and a nitride insulating film in contact with the metal oxide film,
• wherein when a region in the metal oxide film is observed with a transmission electron diffraction measurement apparatus while changing an observation area one-dimensionally within a range of 300 nm, a diffraction pattern with luminescent spots indicating alignment is observed in 80% or more and less than 100% of the region,
• wherein the metal oxide film is a stack of an In-M-Zn oxide film and an In—N—Zn oxide film, M and N being each Al, Ti, Ga, Y, Zr, Sn, La, Ce, or Nd,
• wherein the In-M-Zn oxide film is on and in direct contact with the In—N—Zn oxide film, and
• wherein the proportion of M atoms in the In-M-Zn oxide film is higher than the proportion of N atoms in the In—N—Zn oxide film.