Array substrate, liquid crystal display, thin film transistor, and manufacturing method of array substrate

An array substrate comprising a first thin film transistor and a second thin film transistor on a substrate, wherein

• the first thin film transistor includes
• a first gate electrode provided on the substrate,
• a gate insulating film provided covering the first gate electrode,
• a first oxide semiconductor layer and a second oxide semiconductor layer provided on the gate insulating film while overlapping the first gate electrode in plan view, with a first separation portion separating the first oxide semiconductor layer and the second oxide semiconductor layer from each other,
• a first source electrode and a first drain electrode provided extending from above the first oxide semiconductor layer and above the second oxide semiconductor layer, respectively, onto the gate insulating film while overlapping the first oxide semiconductor layer or the second oxide semiconductor layer in plan view, with a second separation portion, greater than the first separation portion, separating the first source electrode and the first drain electrode from each other, and
• an amorphous silicon layer provided extending on the first separation portion on the gate insulating film, the second separation portion, a part of the first source electrode, and a part of the first drain electrode, and
• the second thin film transistor includes
• a second gate electrode provided on the substrate,
• the gate insulating film provided covering the second gate electrode,
• a third oxide semiconductor layer provided on the gate insulating film while overlapping the second gate electrode in plan view, and
• a second source electrode and a second drain electrode provided extending from above the third oxide semiconductor layer onto the gate insulating film while overlapping the third oxide semiconductor layer in plan view, with a third separation portion separating the second source electrode and the second drain electrode from each other.