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US 10,483,278 B2Granted
Nonvolatile memory devices and methods forming the same
AssigneeSamsung Electronics Co., Ltd.
InventorsChanghyun Lee, Byoungkeun Son
Life of this patent
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Abstract
Provided are nonvolatile memory devices and methods of forming the same. The nonvolatile memory device includes a plurality of word lines, a ground select line, string select line, and a dummy word line. Each of distances between the dummy word line and the ground select line and between the dummy word line and the word line is greater than a distance between a pair of the word lines adjacent to each other.
Claims13
A nonvolatile memory device comprising:
- a substrate;
- a ground select line on the substrate;
- a plurality of word lines vertically stacked on the ground select line;
- a string select line on the plurality of word lines;
- a first dummy word line between the ground select line and a first word line, wherein the first word line is nearest to the ground select line among the plurality of word lines;
- and
- a second dummy word line between the string select line and a second word line, wherein the second word line is nearest to the string select line among the plurality of word lines,
- wherein a first distance between a bottom surface of the ground select line and a bottom surface of the first dummy word line is greater than a second distance between the bottom surface of the first dummy word line and a bottom surface of the first word line,
- wherein a third distance between bottom surfaces of adjacent ones of the plurality of word lines is less than the second distance, and
- wherein the ground select line, the first dummy word line, the plurality of word lines, the second dummy word line and the string select line have the same thickness.
7 more elements
A nonvolatile memory device comprising:
- a substrate;
- and
- first to fourth gate patterns sequentially stacked in a first direction perpendicular to a top surface of the substrate,
- wherein a first distance between a bottom surface of the first gate pattern and a bottom surface of the second gate pattern is greater than a second distance between the bottom surface of the second gate pattern and a bottom surface of the third gate pattern,
- wherein a third distance between the bottom surface of the third gate pattern and a bottom surface of the fourth gate pattern is less than the second distance, and
- wherein the first to fourth gate patterns have the same thickness.
3 more elements
Dependencies are inferred from the claim text.