Semiconductor memory device and method for manufacturing the same

A semiconductor memory device, comprising:

• a substrate;
• a plurality of interconnect portions, at least one portion of the plurality of interconnect portions being provided inside the substrate, each of the plurality of interconnect portions extending in a first direction along a surface of the substrate, the plurality of interconnect portions being arranged along a second direction, the second direction crossing the first direction and being along the surface of the substrate, the plurality of interconnect portions having a line-and-space arrangement arranged along the second direction;
• a conductive layer provided on the plurality of interconnect portions;
• a stacked body provided on the conductive layer, the stacked body including a plurality of electrode layers stacked to be separated from each other, each of the plurality of electrode layers extending in the second direction;
• and
• a plurality of columnar portions provided inside the stacked body, each of the plurality of columnar portions including a semiconductor portion and a charge storage film, the semiconductor portion extending in a stacking direction of the plurality of electrode layers, the charge storage film being provided between the semiconductor portion and the stacked body,
• the plurality of electrode layers being disposed continuously over two or more of the plurality of interconnect portions arranged along the second direction,
• one interconnect portion of the plurality of interconnect portions overlapping two or more sets of the plurality of electrode layers when viewed from the stacking direction, the two or more sets of the plurality of electrode layers extending in the second direction respectively and being separated in the first direction from each other.