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US 10,483,262 B2Granted
Dual nitride stressor for semiconductor device and method of manufacturing
AssigneeTaiwan Semiconductor Manufacturing Company, Ltd.
InventorsYu-Lin Yang, Chia-Cheng Ho, Chih Chieh Yeh, Cheng-Yi Peng, Tsung-Lin Lee
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Abstract
A method for manufacturing a semiconductor device includes forming a fin structure over a substrate and forming a first gate structure over a first portion of the fin structure. A first nitride layer is formed over a second portion of the fin structure. The first nitride layer is exposed to ultraviolet radiation. Source/drain regions are formed at the second portion of the fin structure.
Claims19
A method for manufacturing a semiconductor device, comprising:
- forming a fin structure over a substrate;
- forming a shallow trench isolation region along a lower part of the fin structure;
- forming a first gate structure over a first portion of the fin structure;
- forming a first nitride layer over a second portion of the fin structure and the shallow trench isolation region;
- exposing the first nitride layer to ultraviolet radiation;
- removing a part of the second portion of the fin structure after exposing the first nitride layer to ultraviolet radiation so that the second portion of the fin structure above the shallow trench isolation region is removed and a residual portion of the first nitride layer remains over the shallow trench isolation region;
- and
- forming source/drain regions at the second portion of the fin structure so that the source/drain regions extend along and contact a side surface of the residual portion of the first nitride layer from a bottom of the residual portion to a top of the residual portion and a portion of the source/drain regions are formed vertically and laterally over the residual portion of the first nitride layer.
5 more elements
A method for manufacturing a semiconductor device, comprising:
- forming a first fin structure and a second fin structure over a substrate;
- forming a shallow trench isolation region between the first fin structure and the second fin structure;
- forming a first gate structure over a first portion of the first fin structure and forming a second gate structure over a first portion of the second fin structure;
- forming a first nitride film over a second portion of the first fin structure and the shallow trench isolation region;
- exposing the first nitride film to ultraviolet radiation;
- after exposing the first nitride film to ultraviolet radiation, substantially removing the first nitride film over the second portion of the first fin structure so that a residual portion of the first nitride film remains over the shallow trench isolation region,
- wherein the residual portion has a bottom adjacent the shallow trench isolation region, a top opposing the bottom, and a side extending between the bottom and the top;
- forming source/drain regions at the second portion of the first fin structure so that the source/drain regions extend along and contact the side of the residual portion of the first nitride layer from the bottom to the top and a portion of the source/drain regions are formed vertically and laterally over the residual portion of the first nitride layer;
- forming a second nitride film or an oxide film over a second portion of the second fin structure;
- and
- forming source/drain regions at the second portion of the second fin structure.
8 more elements
A method for manufacturing a semiconductor device, comprising:
- forming a first fin structure and a second fin structure over a substrate;
- forming a shallow trench isolation region between the first fin structure and the second fin structure;
- forming a first gate structure over a first portion of the first fin structure and forming a second gate structure over a first portion of the second fin structure;
- forming a first nitride film over a second portion of the first fin structure and the shallow trench isolation region;
- exposing the first nitride film to ultraviolet radiation;
- removing a part of the second portion of the first fin structure after exposing the first nitride layer to ultraviolet radiation so that a residual portion of the first nitride layer remains over the shallow trench isolation region;
- forming a second nitride film or an oxide film over a second portion of the second fin structure;
- and
- epitaxially forming source/drain regions at the second portion of the first fin structure and the second portion of the second fin structure so that a portion of the source/drain regions at the second portion of the first fin structure extend along and contact a side surface of the residual portion of the first nitride layer from the shallow trench isolation region to a top surface of the residual portion and are formed vertically and laterally over the residual portion of the first nitride layer,
- wherein the source/drain regions at the second portion of the first fin structure comprise SiP and the source/drain regions at the second portion of the second fin structure comprise SiGe.
7 more elements
Dependencies are inferred from the claim text.