Semiconductor carrier with vertical power FET module

A monolithic power management module, comprising:

• a chip carrier further comprising surfaces, ground traces, signal and power interconnects;
• a three dimensional FET formed on the chip carrier to modulate currents through the chip carrier or on the surfaces;
• a toroidal inductor or transformer coil with a ceramic magnetic core formed on the chip carrier adjacent to the three dimensional FET and having a first winding connected to the three dimensional FET, and
• a plurality of passive ceramic components formed on the chip carrier surfaces including clock circuitry in a form of an LCR resonator further comprising an inductor coil, a capacitive element and a resistive element;
• and
• wherein the three dimensional FET includes an elongated gate electrode comprising a conductor that forms a resonant transmission line by configuring the conductor to form a serpentine electrode that contains a capacitive element determined by charge-collected beneath the gate, a resistive dement determined by the conductor, length and cross-sectional area, of the conductor used to form the serpentine electrode, and an Inductive element formed by half-turns that loop the serpentine electrode winding back upon itself.