Optoelectronic semiconductor device and apparatus with an optoelectronic semiconductor device

An optoelectronic semiconductor device comprising:

• an emission region comprising a semiconductor layer sequence with a first semiconductor layer, a second semiconductor layer and, arranged between the first semiconductor layer and the second semiconductor layer, an active region configured to generate radiation;
• a protection diode region;
• and
• a contact for external electrical contacting of the optoelectronic semiconductor device,
• wherein the contact comprises a first contact region electrically conductively connected to the emission region,
• wherein the contact comprises a second contact region located at a distance from the first contact region and electrically conductively connected to the protection diode region,
• wherein the second contact region is not directly electrically connected to the emission region,
• wherein the first contact region and the second contact region are externally electrically contactable by a common end of a single connecting lead, and
• wherein, in plan view of the optoelectronic semiconductor device, the first contact region and the second contact region overlap with the protection diode region.

An optoelectronic semiconductor device comprising:

• an emission region comprising a semiconductor layer sequence with a first semiconductor layer, a second semiconductor layer and, arranged between the first semiconductor layer and the second semiconductor layer, an active region configured to generate radiation;
• a protection diode region;
• and
• a contact for external electrical contacting of the optoelectronic semiconductor device,
• wherein the contact comprises a first contact region electrically conductively connected to the emission region,
• wherein the contact comprises a second contact region located at a distance from the first contact region and electrically conductively connected to the protection diode region,
• wherein the second contact region is not directly electrically connected to the emission region,
• wherein the first contact region and the second contact region are externally electrically contactable by a common end of a single connecting lead,
• wherein the single connecting lead is a wire bond connection,
• wherein the semiconductor layer sequence is arranged on a carrier,
• wherein the contact is arranged on a side of the carrier facing the semiconductor layer sequence, and
• wherein a further contact is arranged on a side of the carrier facing away from the semiconductor layer sequence.