Semiconductor device, display panel, and method for manufacturing display panel

A method for manufacturing a display panel, the method comprising:

• forming a semiconductor layer on a growth substrate, the semiconductor layer comprising an n-type semiconductor layer, an active layer formed on the n-type semiconductor layer, and a p-type semiconductor layer formed on the active layer;
• performing an isolation process of isolating the semiconductor layer into a plurality of light-emitting structures to expose the n-type semiconductor layer between the plurality of light-emitting structures;
• forming a protection layer on side and upper surfaces of each of the plurality of light emitting structures;
• forming a p-type contact layer contacting the p-type semiconductor layer of each of the plurality of light-emitting structures;
• forming a sacrificial layer between the side surfaces of the plurality of light-emitting structures and on the p-type contact layer;
• attaching a first temporary substrate on the sacrificial layer by using an adhesion layer and separating the growth substrate;
• etching the n-type semiconductor layer provided between the plurality of light-emitting structures to expose the sacrificial layer disposed between the plurality of light-emitting structures;
• forming an n-type contact layer contacting an upper surface of the n-type semiconductor layer;
• removing the sacrificial layer disposed between the plurality of light-emitting structures to expose the adhesion layer;
• separating a portion of the plurality of light-emitting structures from the first temporary substrate so as to be arranged a predetermined interval on a second temporary substrate;
• and
• collectively attaching the light-emitting structures, which are arranged on the second temporary substrate, on a panel and removing the second temporary substrate.