Semiconductor device
AssigneeRohm Co., Ltd.
InventorKiyotaka Umemoto
Life of this patent
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Abstract
A semiconductor device includes a semiconductor chip including a semiconductor substrate, an element formed in an element forming region of the semiconductor substrate, and a through-via penetrating across a front surface and a rear surface of the semiconductor substrate while avoiding the element forming region of the semiconductor substrate to form a conductive path between the front surface and the rear surface; a circuit component mounted on a circuit component connection surface at the same side as the front surface of the semiconductor substrate of the semiconductor chip; and an external connection members formed on the rear surface of the semiconductor substrate.
Claims13
A voltage generating apparatus that generates a predetermined output voltage from an input voltage, the apparatus comprising:
- a semiconductor chip including:
- a semiconductor substrate;
- and
- an element formed in an element-forming region on a front surface of the semiconductor substrate;
- an insulating layer provided at a side of a first surface of the semiconductor chip;
- a circuit component mounted on the insulating layer;
- and
- an external connection member provided at a side of a second surface of the semiconductor substrate, which is opposite to the side of the first surface of the semiconductor chip,
- wherein the external connection member includes an input voltage terminal to which the input voltage is input, a ground terminal connected to a ground potential, and an output terminal from which the output voltage is output,
- wherein the element includes a first transistor and a second transistor connected in series between the input voltage terminal and the ground terminal,
- wherein the element further includes a control circuit that controls the first transistor and the second transistor,
- wherein the circuit component includes an inductor connected between the output terminal and a connection point of the first transistor and the second transistor, and
- wherein the inductor is disposed directly over the first transistor or the second transistor.
Dependencies are inferred from the claim text.