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US 10,483,222 B1Granted
Semiconductor device and manufacturing method thereof
AssigneeAmkor Technology, Inc.
InventorsJong Sik Paek, Eun Sook Sohn, In Bae Park, Won Chul Do, Glenn A. Rinne
Life of this patent
Estimating the term…
Abstract
A semiconductor device and a manufacturing method thereof are disclosed. A first insulation layer is formed on a semiconductor die, a redistribution layer electrically connected to a bond pad is formed on the first insulation layer, and a second insulation layer covers the redistribution layer. The second insulation layer is made of a cheap, non-photosensitive material. Accordingly, the manufacturing cost of the semiconductor device can be reduced.
Claims19
A semiconductor device comprising:
- a semiconductor die comprising:
- a top die surface;
- and
- a bond pad on the top die surface;
- a conductive layer comprising a first end coupled to the bond pad, wherein the conductive layer extends laterally from the bond pad over the top die surface;
- a conductive interconnection structure coupled to a second end of the conductive layer;
- and
- an insulation layer formed directly on the conductive interconnection structure and on the conductive layer, the insulation layer comprising a single continuous layer of a non-photosensitive material that laterally surrounds a lower portion of the conductive interconnection structure and does not laterally surround an upper portion of the conductive interconnection structure,
- wherein:
- the lower portion of the conductive interconnection structure that is surrounded by the insulation layer is shaped like a portion of a sphere, the portion of the sphere comprising a curvature in a vertical cross-sectional view;
- and
- the single continuous layer of the non-photosensitive material that laterally surrounds the lower portion of the conductive interconnection structure conforms, in the vertical cross-sectional view, to said curvature.
9 more elements
A method of manufacturing a semiconductor device, the method comprising:
- providing a semiconductor die that comprises:
- a top die surface;
- and
- a bond pad on the top die surface;
- providing a conductive layer comprising a first end coupled to the bond pad, wherein the conductive layer extends laterally from the bond pad over the top die surface;
- providing a conductive interconnection structure coupled to a second end of the conductive layer;
- and
- providing an insulation layer formed directly on the conductive interconnection structure and on the conductive layer, the insulation layer comprising a single continuous layer of a non-photosensitive material that laterally surrounds a lower portion of the conductive interconnection structure and does not laterally surround an upper portion of the conductive interconnection structure,
- wherein:
- the lower portion of the conductive interconnection structure that is surrounded by the insulation layer is shaped like a portion of a sphere, the portion of the sphere comprising a curvature in a vertical cross-sectional view;
- and
- the single continuous layer of the non-photosensitive material that laterally surrounds the lower portion of the conductive interconnection structure conforms, in the vertical cross-sectional view, to said curvature.
9 more elements
Dependencies are inferred from the claim text.