Method of manufacturing semiconductor devices and corresponding device

A semiconductor device, comprising:

• a dielectric layer;
• a passivation layer on the dielectric layer, the passivation layer having a marginal region;
• a first metallization layer extending in a via through the passivation layer, at least a portion of the first metallization layer being positioned lower than an upper surface of the passivation layer;
• a second metallization layer coating a top surface of the first metallization layer and having a peripheral portion coating a side surface of the first metallization layer, the peripheral portion having an end that faces the marginal region of the passivation layer and separated from the marginal region by an undercut gap that extends inward beyond the end;
• and
• a first barrier layer extending in the via and on the marginal region of the passivation layer, the first barrier layer being positioned below the first metallization layer and being separated from the end of the peripheral portion of the second metallization by the undercut gap.

A semiconductor device, comprising:

• a passivation layer having a marginal region;
• a first metallization layer extending in a via through the passivation layer, at least a portion of the first metallization layer being positioned in the via lower than an upper surface of the passivation layer;
• a first conductive barrier layer extending in the via, underlying said first metallization layer, and extending on the marginal region of the passivation layer;
• and
• a second conductive barrier layer extending in the via and over the marginal region of the passivation layer between the first metallization and the first conductive barrier layer, the first conductive barrier layer having a first portion positioned in the via and contacting a bottom surface of the first metallization layer and a second portion positioned on the marginal region of the passivation layer and spaced apart from the second barrier layer by an undercut gap.