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US 10,483,214 B2Granted
Overlay structures
AssigneeGlobalfoundries Inc.
InventorsXintuo Dai, Dongsuk Park, Guoxiang Ning, Mert Karakoy
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Abstract
The present disclosure generally relates to semiconductor structures and, more particularly, to overlay structures and methods of manufacture. The method includes locating a first plurality of offset dummy features in a first layer; locating a second plurality of offset dummy features in a second layer; measuring a distance between the first plurality of offset dummy features and the second plurality of offset dummy features; and determining that the first layer or the second layer is shifted with respect to one another based on the measurement.
Claims14
A method, comprising:
- locating a first plurality of offset dummy features in a first layer;
- locating a second plurality of offset dummy features in a second layer;
- measuring a distance between each offset dummy feature of the first plurality of offset dummy features in the first layer with respect to one another and each offset dummy feature of the second plurality of offset dummy features in the second layer with respect to one another;
- and
- determining that the first layer or the second layer is shifted with respect to one another by comparing the measurement from the first layer or the second layer to a known value.
2 more elements
Dependencies are inferred from the claim text.