Semiconductor device

A semiconductor device, comprising:

• a first semiconductor region of a first conductivity type;
• a stacked body provided on the first semiconductor region, the stacked body including a plurality of electrode layers stacked with an insulating body interposed, the stacked body including a first stacked portion and a second stacked portion, the plurality of electrode layers of the second stacked portion including a plurality of terrace portions arranged in a staircase configuration with a level difference in a first direction;
• a first columnar portion extending through the first stacked portion in a stacking direction of the stacked body and including a first semiconductor body contacting the first semiconductor region;
• an insulating layer provided on the plurality of terrace portions;
• a plurality of contact portions extending through the insulating layer in the stacking direction and contacting the plurality of terrace portions;
• a second columnar portion extending through the insulating layer and through the second stacked portion in the stacking direction, and including a second semiconductor body contacting the first semiconductor region;
• and
• a first insulating portion dividing the first semiconductor region in the first direction, the first insulating portion provided under a boundary portion between the first stacked portion and the second stacked portion.