Semiconductor structure and method for manufacturing the same
AssigneeNanya Technology Corporation
InventorPing Hsu
Life of this patent
Estimating the term…
Abstract
A semiconductor structure and a method for manufacturing the same are provided. The semiconductor structure includes a semiconductor layer, a first conductor, a second conductor and a fuse. The first conductor is disposed over the semiconductor layer. The second conductor is disposed over the first conductor. The fuse is disposed between the first conductor and the second conductor, wherein the fuse includes a conductive portion and a non-conductive portion surrounded by the conductive portion, the conductive portion is in contact with the first conductor and the second conductor, and the non-conductive portion is in contact with the second conductor.
Claims20
A semiconductor structure, comprising:
- a semiconductor layer;
- a first conductor disposed over the semiconductor layer;
- a second conductor disposed over the first conductor;
- and
- a fuse disposed between the first conductor and the second conductor, wherein the fuse includes a conductive portion and a non-conductive portion surrounded by the conductive portion, the conductive portion is in contact with the first conductor and the second conductor, and the non-conductive portion is in contact with the second conductor.
A method for manufacturing a semiconductor structure, comprising:
- forming a first conductor over a semiconductor layer;
- forming a dielectric layer over the semiconductor layer;
- forming a first contact hole through the dielectric layer to the first conductor;
- forming a conductive portion to fill the first contact hole;
- forming a second contact hole through the conductive portion;
- and
- forming a second conductor over the conductive portion to be in contact with the conductive portion.
Dependencies are inferred from the claim text.