Compensation of an arc curvature generated in a wafer
AssigneeCommissariat A L'energie Atomique Et Aux Energies Alternatives
InventorsAbdenacer Ait-Mani, Bertrand Chambion
Life of this patent
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Abstract
This method comprises the steps of: a) forming a set of first trenches on the first surface of the wafer; b) forming a set of second trenches on the second surface of the wafer, at least partially facing the first trenches; c) filling the first trenches with a first material having a CTE α1; d) filling the second trenches with a second material having a CTE α2, and verifying α2>α0 or α2<α0 depending on whether the first material verifies α1>α0 or α1<α0.
Claims18
Method for performing compensation of a bow generated in a wafer made from a material, the wafer comprising opposite first and second surfaces, the material of the wafer having a coefficient of thermal expansion noted α0;
- the method comprising the steps of:
- a) forming a set of first trenches on the first surface of the wafer, the first surface being designed to comprise electronic components;
- b) forming a set of second trenches on the second surface of the wafer, at least partially facing the first trenches;
- c) filling the first trenches with a first material having a coefficient of thermal expansion α1;
- d) filling the second trenches with a second material having a coefficient of thermal expansion α2, and verifying α2>α0 or α2<α0 depending on whether the first material verifies α1>α0 or α1<α0,
- wherein step a) is executed in such a way that first trenches of the set of first trenches define a cutting path of the wafer and step b) is executed in such a way that the set of second trenches are totally facing said first trenches of the set of first trenches.
Structure for performing compensation of a bow, comprising:
- a wafer made from a material, comprising opposite first and second surfaces, the material of the wafer having a coefficient of thermal expansion noted α0;
- a set of first trenches formed on the first surface and filled with a first material having a coefficient of thermal expansion α1;
- a set of second trenches formed on the second surface, at least partially facing the first trenches and filled with a second material having a coefficient of thermal expansion α2, and verifying α2>α0 or α2<α0 depending on whether the first material verifies α1>α0 or α1<α0 ,
- wherein first trenches of the set of first trenches define a cutting path of the wafer and the set of second trenches are totally facing said first trenches of the set of first trenches.
Dependencies are inferred from the claim text.