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US 10,483,185 B2Granted
Semiconductor device and method for manufacturing same
AssigneeFujitsu Limited
InventorsYuichi Minoura, Naoya Okamoto, Toshihiro Ohki
Life of this patent
Estimating the term…
Abstract
A semiconductor device includes a semiconductor chip including a substrate and an element region on the substrate, a heat transfer body made of diamond, and a metal layer between the semiconductor chip and the heat transfer body, wherein the substrate includes an amorphous region on a back surface thereof, the amorphous region and the metal layer are bonded to each other, and the metal layer and the heat transfer body are bonded to each other.
Claims13
A semiconductor device comprising:
- a semiconductor chip including a substrate and an element region on the substrate;
- a heat transfer body made of diamond;
- and
- a metal layer between the semiconductor chip and the heat transfer body;
- wherein the substrate includes an amorphous region on a back surface thereof,
- the amorphous region and the metal layer are bonded to each other,
- the metal layer and the heat transfer body are bonded to each other,
- the substrate is a SiC substrate,
- the amorphous region is an amorphous SiC region, and
- an interface between the amorphous SiC region and the metal layer includes more C atoms than Si atoms.
7 more elements
A method for manufacturing a semiconductor device, the method comprising:
- polishing a back surface of a substrate of a semiconductor chip, the semiconductor chip including the substrate and an element region on the substrate;
- polishing a front surface of a heat transfer body made of diamond;
- forming a metal layer on the front surface of the heat transfer body;
- applying a noble gas to the back surface of the substrate and a front surface of the metal layer in a chamber where a vacuum is created, such that an amorphous region is formed on the substrate and also a back surface of the amorphous region and the front surface of the metal layer are activated;
- and
- causing the activated back surface of the amorphous region and the activated front surface of the metal layer to adhere to each other in the chamber, such that the semiconductor chip and the heat transfer body are bonded to each other,
- wherein the substrate is a SiC substrate,
- the amorphous region is an amorphous SiC region, and
- an interface between the amorphous SiC region and the metal layer includes more C atoms than Si atoms.
6 more elements
Dependencies are inferred from the claim text.