Semiconductor device with sealing portion to suppress connection corrosion

A semiconductor device comprising:

• a semiconductor element having a first pad formed of AlSiCu or AlCu;
• a frame member having a second pad;
• a connection member that contains at least one of copper and silver and connects the first pad and the second pad;
• and
• a sealing portion that is formed of resin composition containing no sulfur in excess of 100 ppm as measured by extraction from the sealing portion by ion chromatographic analysis under an extraction condition that the temperature is 150° C. and the duration of time is 100 hours, the sealing portion sealing the semiconductor element, the frame member, and the connection member,
• wherein arithmetic mean roughness of an upper surface of the second pad is greater than arithmetic mean roughness of the first pad.

A semiconductor device comprising:

• a semiconductor element having a first pad formed of AlSiCu or AlCu;
• a frame member having a second pad;
• a connection member that contains at least one of copper and silver and connects the first pad and the second pad;
• and
• a sealing portion formed of resin composition containing NH4 ion content that is greater than 0 and equal to or less than 55 ppm in ion chromatographic analysis under a first extraction condition that a temperature is 120° C. and duration of time is 100 hours, the resin composition containing no sulfur in excess of 100 ppm as measured by extraction from the sealing portion by ion chromatographic analysis under a second extraction condition that the temperature is 150° C. and the duration of time is 100 hours, the sealing portion sealing the semiconductor element, the frame member, and the connection member.