Method of semiconductor integrated circuit fabrication

A method comprising:

• forming an isolation feature between a first fin and a second fin disposed over a substrate;
• forming a first electrode layer over the first and second fins and the isolation feature, wherein the first electrode layer includes an amorphous material and an air pocket, and wherein the air pocket is disposed over the isolation feature;
• and
• performing a treatment process to the first electrode layer to remove the air pocket,
• wherein the amorphous material of the first electrode layer remains amorphous during the performing of the treatment process.

A method comprising:

• providing a substrate including a plurality of fin elements extending from the substrate;
• forming a first layer over the substrate, wherein the first layer includes a first set of gaps disposed between adjacent fin elements;
• and
• performing a first anneal process to the first layer to remove the first set of gaps,
• wherein the amorphous material of the first layer remains amorphous during the performing of the first anneal process, and
• wherein the performing the first anneal process includes:
• applying a first energy to a first portion of the first layer;
• and
• applying a second energy to a second portion of the first layer, wherein the second energy is different from the first energy.