Semiconductor structure and method for manufacturing the same

A method for forming a semiconductor structure, comprising:

• providing an epitaxial structure comprising a first semiconductor material and a second semiconductor material, and a lattice constant of the second semiconductor material being greater than a lattice constant of the first semiconductor material;
• disposing a metal-containing layer on the epitaxial structure, the metal-containing layer comprising at least a first metal material;
• performing an ion implantation to implant ions of a second metal material to the metal-containing layer;
• and
• annealing the metal-containing layer and the epitaxial structure to form a metal silicide layer on the epitaxial structure, the metal silicide layer comprising the first semiconductor material, the second semiconductor material, the first metal material and the second metal material.

A semiconductor structure comprising:

• an epitaxial structure comprising a first semiconductor material and a second semiconductor material, and a lattice constant of the second semiconductor material being greater than a lattice constant of the first semiconductor material;
• a quaternary metal silicide layer on the epitaxial structure, wherein the quaternary silicide layer comprises the first semiconductor material, the second semiconductor material, a first metal material and a second metal material, and an atomic size of the second metal material is greater than an atomic size of the first metal material;
• and
• a conductive plug penetrating the quaternary metal silicide layer,
• wherein a bottom most surface of the conductive plug is lower than a bottom most surface of the quaternary silicide layer.