Self-forming barrier process
AssigneeLam Research Corporation
InventorsAniruddha Joi, Yezdi Dordi
Life of this patent
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Abstract
A method is provided, including the following operations: performing a deposition process on a substrate, the deposition process configured to deposit a ruthenium layer in a feature on the substrate, the ruthenium layer being doped with zinc at an atomic percentage less than approximately 30 percent; after depositing the ruthenium layer, annealing the substrate, wherein the annealing is configured to cause migration of the zinc to an interface of the ruthenium layer and an oxide layer of the substrate, the migration of the zinc producing an adhesive barrier at the interface that inhibits electromigration of the ruthenium layer.
Claims21
A method, comprising:
- performing a deposition process on a substrate, the deposition process configured to deposit a ruthenium layer in a feature on the substrate, the ruthenium layer being doped with zinc at an atomic percentage less than approximately 30 percent;
- after depositing the ruthenium layer, annealing the substrate, wherein the annealing is configured to cause migration of the zinc to an interface at an oxide layer of the substrate, the migration of the zinc producing an adhesive barrier at the interface that inhibits electromigration of the ruthenium layer.
A method, comprising:
- performing a deposition process on a substrate, the deposition process configured to deposit a metallic layer in a feature on the substrate, the metallic layer consisting of ruthenium doped with zinc at an atomic percentage less than approximately 5 percent;
- after depositing the metallic layer, annealing the substrate, wherein the annealing is configured to cause migration of the zinc to an interface of the metallic layer and an oxide layer of the substrate, the migration of the zinc producing a barrier at the interface that inhibits electromigration of the metallic layer.
A method, comprising:
- performing a first deposition process on a substrate, the first deposition process configured to deposit a ruthenium layer in a feature on the substrate;
- performing a second deposition process on the substrate, the second deposition process configured to deposit a conformal layer of zinc over the ruthenium layer;
- annealing the substrate, wherein the annealing is configured to cause migration of the zinc to an interface at an oxide layer of the substrate, the migration of the zinc producing a barrier at the interface that inhibits electromigration of the ruthenium layer.
Dependencies are inferred from the claim text.