Semiconductor structure of interconnect and fabrication method thereof
AssigneesSemiconductor Manufacturing International (Shanghai) Corporation, Semiconductor Manufacturing International (Beijing) Corporation
InventorHao Deng
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Abstract
A semiconductor structure and a fabrication method are provided. The fabrication method includes: providing a substrate; forming a dielectric layer with an opening on the substrate; forming a first barrier layer on sidewall and bottom surfaces of the opening, the first barrier layer being doped by manganese; and forming a metal interconnect on the first barrier layer, the metal interconnect being located within the opening.
Claims18
A method of forming a semiconductor structure, comprising:
- providing a substrate;
- forming a dielectric layer with an opening on the substrate;
- forming a first barrier layer on sidewall and bottom surfaces of the opening, wherein the first barrier layer is made of a material including tantalum nitride doped with manganese, the first barrier layer is formed by an atomic layer deposition process, and forming the first barrier layer comprises:
- introducing a tantalum source gas to the substrate, a portion of the tantalum source gas being adsorbed on the substrate;
- evacuating the tantalum source gas that is not adsorbed on the substrate;
- introducing a manganese source gas to the substrate, a portion of the manganese source gas being adsorbed on the substrate;
- evacuating the manganese source gas that is not adsorbed on the substrate;
- introducing a nitrogen source gas to the substrate, a portion of the nitrogen source gas being adsorbed on the substrate;
- and
- evacuating the nitrogen source gas that is not adsorbed on the substrate, wherein the atomic layer deposition process uses:
- the tantalum source gas including C10H30N5Ta, with a flow rate in a range of approximately 500 standard ml/min˜1500 standard ml/min;
- the manganese source gas including (C5H5)2Mn, with a flow rate in a range of approximately 50 standard ml/min˜150 standard ml/min;
- the nitrogen source gas including ammonia gas, with a flow rate in a range of approximately 500 standard ml/min˜2000 standard ml min;
- a deposition temperature in a range of approximately 250° C.˜350° C.;
- and
- a pressure in a reaction chamber in a range of approximately 2 Torr˜10 Torr;
- and
- forming a metal interconnect on the first barrier layer, the metal interconnect being located within the opening.
A method of forming a semiconductor structure, comprising:
- providing a substrate;
- forming a dielectric layer with an opening on the substrate;
- forming a first barrier layer on sidewall and bottom surfaces of the opening, the first barrier layer being doped with manganese;
- forming a second barrier layer on a top surface of the first barrier layer after forming the first barrier layer and before forming a metal interconnect;
- and
- forming the metal interconnect on the first barrier layer, the metal interconnect being located within the opening, wherein the second barrier layer is formed by a physical vapor deposition process and the physical vapor deposition process uses:
- a DC power in a range of approximately 5,000 W to 15,000 W;
- an AC bias power in a range of approximately 200 W to 600 W;
- a flow rate of argon in a range of approximately 5 standard ml/min˜30 standard ml/min;
- and
- a pressure in a range of approximately 15 mTor˜60 mTorr.
Dependencies are inferred from the claim text.