Back to results
US 10,483,160 B2Granted
Ultra thin helmet dielectric layer for maskless air gap and replacement ILD processes
AssigneeIntel Corporation
InventorsJeffery D. Bielefeld, Manish Chandhok, Asad Iqbal, John D. Brooks
Life of this patent
Estimating the term…
Abstract
A helmet layer is deposited on a plurality of conductive features on a first dielectric layer on a substrate. A second dielectric layer is deposited on a first portion of the helmet layer. An etch stop layer is deposited on a second portion the helmet layer.
Claims20
A method to manufacture an electronic device, comprising:
- depositing a helmet layer on a plurality of conductive features on a first dielectric layer on a substrate;
- depositing a second dielectric layer on a first portion of the helmet layer;
- and
- depositing an etch stop layer on a second portion of the helmet layer, wherein the etch stop layer comprises a dielectric material.
1 more element
A method to provide a maskless air gap flow, comprising:
- etching a trench in a first dielectric layer between conductive features on a substrate, the trench having a bottom below a bottom of the conductive features;
- depositing a helmet layer on the trench and the conductive features, the helmet layer directly on the conductive features;
- depositing a second dielectric layer on the helmet layer on the trench;
- depositing a screen layer on the second dielectric layer;
- and
- removing the second dielectric layer through the screen layer for form an air gap.
3 more elements
A method to provide a replacement interlayer dielectric flow, comprising:
- etching a trench in a first dielectric layer between conductive features on a substrate, the trench having a bottom below a bottom of the conductive features;
- depositing a helmet layer on the trench and the conductive features, the helmet layer directly on the conductive features;
- depositing a second dielectric layer on the helmet layer;
- and
- depositing an etch stop layer on the second dielectric layer.
2 more elements
An electronic device, comprising a helmet layer on a plurality of conductive features on a first dielectric layer on a substrate;
- a second dielectric layer on a first portion of the helmet layer on a trench between at least two of the conductive features;
- and
- an etch stop layer on a second portion of the helmet layer, wherein the etch stop layer comprises a dielectric material.
Dependencies are inferred from the claim text.