Trench isolation interfaces
AssigneeMicron Technology, Inc.
InventorArup Bhattacharyya
Life of this patent
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Abstract
The present disclosure includes semiconductor structures and methods of forming semiconductor structures for trench isolation interfaces. An example semiconductor structure includes a semiconductor substrate having a shallow trench isolation (STI) structure with a trench formed therein. An material in the trench forms a charged interface by interaction with the semiconductor substrate of the STI structure. The formed charged interface raises a parasitic threshold of the STI structure.
Claims20
A method of forming a semiconductor structure, comprising:
- forming a shallow trench isolation (STI) structure in a polycrystalline silicon (polysilicon) substrate material;
- depositing a layer of aluminum oxide (Al2O3) dielectric on vertical and horizontal surfaces of the STI structure to form a trench between the STI structure and a memory device;
- forming an interface in the trench with a fixed negative charge by interaction of the polysilicon substrate material with the Al2O3 dielectric layer;
- and
- thereby raising a parasitic threshold of the STI structure.
A method of forming a semiconductor structure, comprising:
- forming a trench in a semiconductor substrate to have a shallow trench isolation (STI) structure;
- forming a charged interface in the trench by interaction of a material with the semiconductor substrate of the STI structure;
- and
- raising, by the formed charged interface, a parasitic threshold of the STI structure.
A method of forming a semiconductor structure, comprising:
- forming a trench in a semiconductor substrate to have a shallow trench isolation (STI) structure;
- forming an aluminum oxide (Al2O3) dielectric layer in the trench;
- forming an injector silicon-rich nitride (IN-SRN) layer on a surface of the trench opposite from the semiconductor substrate of the STI structure and adjacent the Al2O3 dielectric layer;
- and
- raising a parasitic threshold of the STI structure by a charged interface formed from a composite of the Al2O3 dielectric layer and the IN-SRN layer.
Dependencies are inferred from the claim text.