Protective tape and method for manufacturing semiconductor device

A method for manufacturing a semiconductor device, the method comprising:

• pasting a protective tape to a surface of a wafer on which a bump electrode is formed, the protective tape having an adhesive agent layer, a thermoplastic resin layer, and a matrix film layer in this order;
• grinding a surface of the wafer opposite to the surface on which the protective tape is pasted;
• pasting an adhesive tape to the ground surface of the wafer;
• peeling the protective tape so that the adhesive agent layer remains and other layers are removed;
• dicing the wafer to which the adhesive tape is pasted to obtain individual semiconductor chips;
• and
• curing the adhesive agent layer before dicing, wherein:
• the adhesive agent layer after curing has a shear storage modulus of 3.0E+08 Pa to 5.0E+09 Pa, and
• the ratio of the thickness of the adhesive agent layer of the protective tape before pasting to the height of the bump electrode is 1/30 to 1/6.