Etching method

An etching method for a target object including a main surface, grooves formed in the main surface, and an etching target film covering the main surface and surfaces of the grooves, the method comprising:

• a first step of accommodating the target object in a processing chamber of a plasma processing apparatus;
• a second step of supplying a first gas into the processing chamber;
• and
• a third step of supplying a second gas and a high frequency power for plasma generation into the processing chamber and generating in the processing chamber a plasma of a gas including the second gas in the processing chamber,
• wherein:
• the first gas contains an oxidizing agent that does not include a hydrogen atom;
• the second gas contains a compound that includes one or more silicon atoms and one or more fluorine atoms and does not include a hydrogen atom;
• the etching target film is made of a material that is dry etched by using fluorine;
• portions of the etching target film which cover the surfaces of the grooves are selectively removed;
• the etching target film is made of TiN;
• and
• the temperature of the target object in the third step is lower than 250° C.