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US 10,483,132 B2Granted
Post-passivation interconnect structure and method of forming the same
AssigneeTaiwan Semiconductor Manufacturing Company, Ltd.
InventorsHung-Jen Lin, Tsung-Ding Wang, Chien-Hsun Lee
Life of this patent
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Abstract
A semiconductor device includes a passivation layer formed on a semiconductor substrate, a protective layer overlying the passivation layer and having an opening, an interconnect structure formed in the opening of the protective layer, a bump formed on the interconnect structure, and a molding compound layer overlying the interconnect structure and being in physical contact with a lower portion of the bump.
Claims22
A semiconductor device, comprising:
- a passivation layer formed on a semiconductor substrate, the passivation layer having a first opening exposing a contact pad, the passivation layer extending along sidewalls of the contact pad;
- a protective layer overlying the passivation layer, the protective layer comprising a first protective layer and a second protective layer, the first protective layer being a single layer and having a second opening, the first protective layer extending along an upper surface and sidewalls of the passivation layer, the first protective layer contacting the contact pad;
- an interconnect structure formed in and filling the second opening of the first protective layer and the first opening in the passivation layer, the interconnect structure having an entire top surface substantially co-planar with a top surface of the second protective layer, wherein the interconnect structure comprises a first interconnect layer extending continuously from the top surface of the second protective layer to a bottommost surface of the interconnect structure, wherein a sidewall of the second protective layer adjacent to the interconnect structure is substantially perpendicular to the top surface of the second protective layer;
- a bump directly on the interconnect structure, wherein the interconnect structure is in physical contact with a top surface of the first protective layer directly below the bump;
- and
- a molding compound layer in physical contact with the protective layer, the interconnect structure and a lower portion of the bump.
3 more elements
A semiconductor device, comprising:
- a contact pad on a semiconductor substrate;
- a passivation layer covering at least a portion of the contact pad;
- a first polymer layer overlying the contact pad and the semiconductor substrate, a second polymer layer overlying the first polymer layer, the first polymer layer and the second polymer layer including an opening exposing the contact pad;
- a post-passivation interconnect (PPI) structure formed in and filling the opening of the first polymer layer and the second polymer layer and having an entire top surface substantially co-planar with an uppermost surface of the second polymer layer, wherein the PPI structure comprises a first portion and a second portion, the first portion being electrically connected to the contact pad, the contact pad being interposed between the PPI structure and the semiconductor substrate, and wherein the PPI structure comprises a barrier layer extending along sidewalls of the first polymer layer and sidewalls of the second polymer layer, the barrier layer comprising a single continuous layer extending from the uppermost surface of the second polymer layer and directly contacting the contact pad;
- a bump on and electrically connected to the second portion of the PPI structure, the bump and the PPI structure having no intervening contact pad, wherein the second portion of the PPI structure is in physical contact with an upper surface of the first polymer layer directly below the bump;
- and
- a molding compound layer in physical contact with the PPI structure and the second polymer layer, the molding compound layer being in physical contact with a lower portion of the bump, wherein the bump does not extend over an upper surface of the molding compound layer.
4 more elements
A semiconductor device, comprising:
- a contact pad on a wafer scale substrate;
- a first protective layer overlying the contact pad, the first protective layer having a first opening exposing the contact pad, the first protective layer contacting the contact pad;
- a first polymer layer overlying the first protective layer and the wafer scale substrate, and a second polymer layer overlying the first polymer layer, the first polymer layer and the second polymer layer including a second opening exposing the contact pad, the first polymer layer being in physical contact with the contact pad, the first polymer layer and the first protective layer being formed of different materials;
- a post-passivation interconnect (PPI) structure formed in and filling the first opening of the first protective layer and the second opening of the first polymer layer and the second polymer layer, the PPI structure having an entire top surface substantially co-planar with a topmost surface of the second polymer layer, wherein the PPI structure comprises a first portion, a second portion, and a third portion, the first portion being electrically connected to the contact pad, the first portion extending into the first opening, wherein the third portion electrically couples the first portion to the second portion, a width of the third portion being less than a width of the first portion and a width of the second portion in a plan view, the contact pad being interposed between the PPI structure and the wafer scale substrate;
- a barrier layer extending along sidewalls of the PPI structure, wherein the barrier layer comprises a single barrier layer, wherein the single barrier layer extends continuously from the topmost surface of the second polymer layer to the contact pad, wherein the single barrier layer does not extend between the first portion and the second portion of the PPI structure, and wherein the single barrier layer comprises a different material than the PPI structure;
- a bump directly on and electrically connected to the second portion of the PPI structure;
- and
- a molding compound layer in physical contact with the PPI structure and the second polymer layer, the molding compound layer contacting the bump.
5 more elements
Dependencies are inferred from the claim text.