Semiconductor device

A semiconductor device comprising:

• a substrate;
• a first stack above the substrate and including first insulation layers and first conductive layers alternately stacked in a first direction, the first stack including a staircase-shaped portion in an end part of the first stack in a second direction parallel to a main face of the substrate, the staircase-shaped portion including steps and terraces corresponding to the first conductive layers;
• at least one second stack above the substrate and including at least one first layer and at least one second layer stacked in the first direction;
• and
• a third stack above the substrate and including at least one third layer and at least one fourth layer stacked in the first direction, the third stack being aligned with the second stack along a third direction crossing the second direction,
• wherein a first dimension of the first stack in the third direction is larger than a second dimension of the second stack in the third direction and a third dimension of the third stack in the third direction, and/or
• a first number of stacked layers of the first stack in the first direction is greater than a second number of stacked layers of the second stack in the first direction and a third number of stacked layers of the third stack in the first direction.

A semiconductor device comprising:

• a substrate;
• a first stack above the substrate and including first insulation layers and first conductive layers alternately stacked in a first direction, the first stack including a staircase-shaped portion in an end part of the first stack in a second direction parallel to a main face of the substrate, the staircase-shaped portion including steps and terraces corresponding to the first conductive layers, at least a part of the steps having arc shape curved along a third direction crossing the second direction;
• and
• a second stack above the substrate and including at least one first layer and at least one second layer stacked in the first direction,
• wherein a first number of stacked layers of the first stack in the first direction is greater than a second number of stacked layers of the second stack in the first direction.