Etching method

An etching method of etching a processing target object within a processing vessel, the processing target object having a first region containing SiC and a second region containing Ti, TiN, TiOx, W, WC, Hf, HfOx, Zr, ZrOx, Ta, SiO2, Si, SiGe, Ge, or Ru (x is an integer), the etching method comprising:

• removing the first region as an etching target layer by using the second region as a mask and by repeating a sequence comprising:
• forming, by generating first plasma from a first gas containing nitrogen, a mixed layer containing ions contained in the first plasma in the first region;
• and
• removing the mixed layer by generating second plasma from a second gas containing fluorine within the processing vessel after the forming of the mixed layer.

An etching method, comprising:

• preparing a processing target object having a first region as an etching target layer made of a first material containing silicon carbide and a second region as a mask containing containing silicon nitride;
• forming a layer containing nitrogen in the first region by exposing the processing target object to nitrogen plasma;
• and
• after the forming of the layer, removing the layer by exposing the processing target object to fluorine plasma,
• wherein the first region is removed by using the second region as a mask and by repeating the forming of the layer and the removing of the layer.