Methods of depositing metal films using metal oxyhalide precursors
AssigneeApplied Materials, Inc.
InventorsXinyu Fu, David Knapp, David Thompson, Jeffrey W. Anthis, Mei Chang
Life of this patent
Estimating the term…
Abstract
Processing methods comprising exposing a substrate to an optional nucleation promoter followed by sequential exposure of a first reactive gas comprising a metal oxyhalide compound and a second reactive gas to form a metal film on the substrate.
Claims17
A processing method comprising exposing a substrate to a first reactive gas and a second reactive gas to deposit a metal film on the substrate, the first reactive gas having an initial composition and a final composition, the initial composition comprising a metal oxyhalide, the final composition comprising a metal halide, the metal film having a resistivity less than 200 μΩ-cm and a metal content greater than 50 atomic percent.
A processing method comprising
- positioning a substrate having a dielectric surface in a processing chamber;
- treating the dielectric surface with a nucleation promoter selected from the group consisting of trialkylaluminum, trialkylgallium, trialkylindium, disilane, trisilane, tetrasilane, diethylsilane, derivatives thereof and combinations thereof;
- and
- sequentially exposing at least a portion of the treated dielectric surface to a first reactive gas and a second reactive gas to form a tungsten film, the first reactive gas having substantially no fluorine, an initial composition and a final composition, the initial composition comprising tungsten oxychloride and the final composition comprising tungsten halide and the second reactive gas comprises hydrogen.
Dependencies are inferred from the claim text.