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US 10,483,115 B2Granted
Semiconductor device and method for manufacturing the same
AssigneeTaiwan Semiconductor Manufacturing Company, Ltd.
InventorsYou-Hua Chou, Kuo-Sheng Chuang
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Abstract
A semiconductor device includes a non-insulator structure, at least one carbon nano-tube (CNT), a dielectric layer, and a graphene-based conductive layer. The CNT is over the non-insulator structure. The dielectric layer surrounds the CNT. The graphene-based conductive layer is over the at least one CNT. The CNTs and the graphene-based conductive layer have low resistance.
Claims20
A semiconductor device, comprising:
- a non-insulator structure formed in one of a source/drain region and a gate structure;
- at least one carbon nano-tube (CNT) over the non-insulator structure;
- a dielectric layer surrounding the CNT;
- and
- a graphene-based conductive layer over the at least one CNT.
2 more elements
A semiconductor device, comprising:
- a non-insulator structure;
- a carbon nano-tube (CNT) electrically connected to the non-insulator structure;
- a first dielectric layer, the CNT being within the first dielectric layer;
- a second dielectric layer over the first dielectric layer;
- and
- a U-shaped graphene-based conductive layer within the second dielectric layer and electrically connected to the CNT.
3 more elements
A method for manufacturing a semiconductor device, comprising:
- forming a hole in a first dielectric layer over a non-insulator structure;
- forming a carbon nano-tube (CNT) in the hole and electrically connected to the non-insulator structure;
- forming a second dielectric layer over the CNT and the first dielectric layer;
- forming a trench in the second dielectric layer and exposing a top surface of the CNT;
- and
- after forming the trench, forming a graphene-based conductive layer in the trench and electrically connected to the CNT.
3 more elements
Dependencies are inferred from the claim text.