Semiconductor device and method of manufacturing semiconductor device

Abstract

A p-type oxide semiconductor is prevented from being oxidized by oxygen in an n-type oxide semiconductor even if the p-type oxide semiconductor is provided as a termination structure in the n-type oxide semiconductor. A semiconductor device includes an n-type gallium oxide substrate, an anode electrode joined to the n-type gallium oxide substrate, and a cathode electrode provided on the n-type gallium oxide substrate. Current flows between the anode electrode and the cathode electrode via the n-type gallium oxide substrate provided between the anode electrode and the cathode electrode. The semiconductor device further includes a p-type oxide semiconductor layer provided adjacent to a junction between the anode electrode and the n-type gallium oxide substrate, and a nitride layer provided between the p-type oxide semiconductor layer and the n-type gallium oxide substrate.

Dependencies are inferred from the claim text.