Nanowire bending for planar device process on (001) Si substrates

A method for growing a nanowire, comprising:

• providing a substrate comprising a base portion having a first surface and at least one support structure extending either above or below the first surface;
• forming a dielectric coating on the at least one support structure;
• forming a photoresist coating over the substrate, wherein the photoresist coating surrounds a portion of the at least one support structure;
• forming a metal coating over at least a portion of the dielectric coating;
• removing a portion of the dielectric coating to expose a surface of the at least one support structure;
• removing a portion of the at least one support structure to form a nanowire growth surface;
• growing at least one nanowire on the nanowire growth surface of a corresponding one of the at least one support structure, wherein the nanowire comprises a root end attached to the growth surface and an opposing, free end extending away from the support structure;
• and
• elastically bending the at least one nanowire.