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US 10,483,099 B1Granted
Method for forming thermally stable organosilicon polymer film
AssigneeASM IP Holding B.V.
InventorTimothee Julien Vincent Blanquart
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Abstract
A method of forming a thermally stable organosilicon polymer includes: (i) depositing an organosilicon polymer whose backbone is composed of silicon atoms on a substrate using a silicon-containing precursor in a reaction space; and (ii) exposing the organosilicon polymer deposited in step (i) to a hydrogen plasma in the absence of the precursor in the reaction space in a manner increasing Si—H bonds and decreasing C—H bonds in the organosilicon polymer without depositing an organosilicon polymer.
Claims13
A method of forming a thermally stable organosilicon polymer, comprising:
- (i) depositing an organosilicon polymer whose backbone is primarily or partly composed of silicon atoms on a substrate using a silicon-containing precursor in a reaction space;
- and
- (ii) exposing the organosilicon polymer deposited in step (i) to a hydrogen plasma in the absence of the precursor in the reaction space in a manner increasing Si—H bonds and decreasing C—H bonds in the organosilicon polymer without depositing an organosilicon polymer.
Dependencies are inferred from the claim text.